Abstract
Pulsed power-switching applications require devices that are compact and jitter-free and that have high gating gain and fast current rate-of-rise for large-current pulses. Optically switched GaAs thyristors were studied to address these requirements and were found to possess desirable switching characteristics. A p-i-n base with semi-insulating GaAs was used in the structure, and the junctions were formed with metalorganic chemical vapor depositions (MOCVD).
© 1991 Optical Society of America
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