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Conferences > CLEO > 1991 > CTuQ > CTuQ7
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CTuQ7

Mirror facet temperature study of cw high-power (P = 5.3 W, λ = 0.8 μm) InGaAsP/GaAs SCH single quantum-well laser diodes

D. Z. Garbuzov, N. I. Katsavets, A. V. Kochergin, A. V. Michailov, E. U. Rafailov, and V. B. Khalfin

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Abstract

Results published recently1,2 demonstrate that high-power λ = 0,808 μm laser diodes can be prepared based on InGaAsP/GaAs SCH single quantum-well (SQW) structures grown by a modified version of liquid phase epitaxy.

© 1991 Optical Society of America

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