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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CWB4

InGaAs/InP multiple quantumwell long-wavelength photodetectors

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Abstract

High-sensitivity, long-wavelength, IR photodetectors sensitive in the 8-12-μm atmospherie spectral window have recently been demonstrated by using intersubband absorption in CaAs/AlxGa1_x. As multiple quantum-well (MQVV) structures. These quantum-well IR photodetectors (QWIPs) rely on the photoionization of carriers from the ground state of n-doped quantum wells and subsequent carrier transport in the presence of an applied electric field.

© 1991 Optical Society of America

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