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Conferences > CLEO > 1991 > CWD > CWD4
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CWD4

Temperature dependence of electron mobility in photorefractive Bi12SiO20

P. Nouchi, J. P. Partanen, and R. W. Hellwarth

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Abstract

The photorefractive effect is usually described by a band-transport model in which photoexcited electrons or holes move by means of ohmic drift or diffusion. A direct measurement of a key parameter, charge-carrier mobility, has been achieved only recently in any photorefractive insulator by using a holographic time-of-flight technique.1,2 Here we report the first direct measurements of electron mobility as a function of temperature in photorefractive Bi12SiO20 (BSO).

© 1991 Optical Society of America

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