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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CWF16

Band mixing effects in strained layer semiconductor lasers

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Abstract

The presence of biaxial compressive strain in quantum-well lasers can lead to dramatic improvements in the predicted device performance. It lifts the light and heavy hole degeneracy, thereby reducing the effective mass of the lowest energy valence subband over a wide range rtf momenta, and reducing the density of carriers required to achieve population inversion, it has also been suggested that the strain will lead to a reduction in intervalence band absorption and Auger recombination losses.

© 1991 Optical Society of America

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