Abstract
The development of integrated optoelectronic logic devices is of primary importance to the progress of optical image and data processing1,2 since these devices can greatly increase the power and flexibility of optical processing arrays. This paper presents the design, analysis, and experimental demonstration of a monolithically integrated all optical NOB gate based on the light amplifying optical switch (LAOS). The LAOS device is a heterojunction photo transistor (HPT) vertically integrated with a light-emitting diode (LED). The HPT has broad spectral sensitivity (0.9-1.7 μm) and thus does not require highly stable or tunable laser input sources. The I-V characteristics of the LAOS device exhibit a thyrister-type negative differential resistance and therefore, it has two stable operating points: high resistance (off) state and low resistance (on) state.3,4
© 1992 Optical Society of America
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