Abstract
Shortening the oscillation wavelength of AlGaInP visible lasers is important for uses such as laser printers and optical disks. One of the problems in AlGaInP lasers is that AlGaInP tends to form a natural superlattice to have a smaller effective band gap. Therefore, most short wavelength lasers cw-operated around 633 nm, which is the wavelength of He-Ne gas lasers, were grown on off-angled substrates from (100) to prevent the formation of natural superlattice.1–3 However, the use of off-angled substrate could cause new difficulties such as the degradation of beam qualify due to substrate asymmetry. We report a successful 632.7-nm RT (25°C cw operation of AlGaInP lasers grown on (100) exactly oriented substrate.
© 1992 Optical Society of America
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