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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1992),
  • paper CMI7

Diode-pumped electro-optically Q-switched microchip lasers

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Abstract

The electro-optically Q-switched microchip laser1,2 used in the experiments described here (illustrated in Figure 1) consists of a 532-μm long piece of Nd:YAG bonded to a 904-μm long piece of LiTaO3. Both materials are polished flat and parallel on the two faces normal to the optic axis. The pump face of the Nd:YAG is dielectrically coated to transmit the pump light and to be highly reflecting at the oscillating wavelength (1064 µm). A partially transmitting mirror between the two materials has a reflectivity of 95% at 1.064 µm and is highly reflecting at the pump wavelength. The opposite face of the LiTaO3, is coated for 50% reflectivity at 1.064 µm. The LiTaO3 is oriented with, its c-axis orthogonal to the cavity axis.

© 1992 Optical Society of America

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