Direct measurement of conduction band mobility in n-type Bi12SiO20

P. Nouchi; J. P. Partanen; R. W. Hellwarth

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1992),
paper CTuC7

Direct measurement of conduction band mobility in n-type Bi₁₂SiO₂₀

P. Nouchi, J. P. Partanen, and R. W. Hellwarth

Conference on Lasers and Electro-Optics 1992

Anaheim, California United States
10–15 May 1992
ISBN: 1-55752-537-5

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Photorefractive Materials (CTuC)

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P. Nouchi, J. P. Partanen, and R. W. Hellwarth, "Direct measurement of conduction band mobility in n-type Bi12SiO20," in Conference on Lasers and Electro-Optics, A. Johnson, R. Lind, T. Baer, and A. Smirl, eds., Vol. 12 of OSA Technical Digest (Optica Publishing Group, 1992), paper CTuC7.

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Abstract

Reports from many laboratories strongly indicate that the usual drift mobility μ that is measured or inferred for photo-excited carriers in room temperature insulators is a trap-limited mobility μ. That is to say, the drifting carriers spend a large fraction of the drifting time dwelling in shallow traps as they move from one shallow trap to another.¹

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