Abstract
An important use for single-mode semiconductor laser diodes, operating at either 980 or 1480 nm is the pumping of erbium- doped optical fibers for optical amplifiers.1 Several groups have fabricated index-guided strained-layer laser diodes that use InGaAs quantum wells (QW).2 Although both metalorganic vapor phase epitaxy and molecular beam epitaxy have been used to grow these structures, the basic epitaxial structures described in the literature are fairly similar.
© 1992 Optical Society of America
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