Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1992),
  • paper CWH4

Batch fabrication and structure of integrated GaAs-AlxGa1-xAs FET-SEEDs

Not Accessible

Your library or personal account may give you access

Abstract

Previous work on self-electro-optic effect devices (SEEDs) has resulted in the batch fabrication of large arrays of photonic switching devices7 and the demonstration of switching in cascaded operation of arrays.2 The speed of switching in an array of SEEDs is limited by available laser power at the exciton absorption wavelength in the quantum wells (850 nm in GaAs). This limitation can be alleviated by placing an integrated FET amplifier in each SEED circuit at the QW diode modulator location. Our speed objective is hundreds of megabits/s in cascaded operation.

© 1992 Optical Society of America

PDF Article
More Like This
Integrated GaAs/AlGaAs FET-SEEDs

T. K. Woodward, L. M. F. Chirovsky, A. I. Lentine, L. A. D’Asaro, E. J. Laskowski, S. S. Pel, and F. Ren
CMC3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1992

Frequency stabilization of AlxGa1-xAs/GaAs lasers at the kilohertz level

W. David Lee and Joe C. Campbell
CWG59 Conference on Lasers and Electro-Optics (CLEO:S&I) 1992

INTERSUBBAND RELAXATION IN GaAs/AlxGa1−xAs QUANTUM WELL STRUCTURES

A. Seilmeier, M. Wörner, H.-J. Hübner, G. Abstreiter, G. Weimann, and W. Schlapp
ThB8 International Quantum Electronics Conference (IQEC) 1988

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved