High-power strained-layer tapered unstable-resonator laser

J. N. Walpole; E. S. Kintzer; S. R. Chinn; C. A. Wang; L. J. Missaggia

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1992),
paper CWN1

High-power strained-layer tapered unstable-resonator laser

J. N. Walpole, E. S. Kintzer, S. R. Chinn, C. A. Wang, and L. J. Missaggia

Conference on Lasers and Electro-Optics 1992

Anaheim, California United States
10–15 May 1992
ISBN: 1-55752-537-5

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High Power Semiconductor Lasers 2 (CWN)

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J. N. Walpole, E. S. Kintzer, S. R. Chinn, C. A. Wang, and L. J. Missaggia, "High-power strained-layer tapered unstable-resonator laser," in Conference on Lasers and Electro-Optics, A. Johnson, R. Lind, T. Baer, and A. Smirl, eds., Vol. 12 of OSA Technical Digest (Optica Publishing Group, 1992), paper CWN1.

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Abstract

Semiconductor lasers using an unstable resonator (UR) for improved mode quality have been proposed and demonstrated.¹ Most of these devices utilize curved mirror facets to achieve unstable cavities.

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