Abstract
For many semiconductor laser uses, such as solid-state laser end pumping, free-space optical communications, and optical detonation, single-lobed diffraction-limited beams of hundreds of milliwatts to multiple watts are required. There has been a recent resurgence of activity that applies unstable resonator concepts to semiconductor lasers to achieve the required beams.1 The success of that work has resulted from new design considerations which suggest the use of low magnification resonators1 and the application of focused ion beam micromachining2 (FIBM) to precisely form the required curved mirrors. As an extension of this work, we demonstrate high-power (6 W, double facet) high brightness output from an InGaAs strained-layer GRINSCH SQW low-magnification unstable resonator semiconductor laser (URSL) fabricated by FIBM.
© 1992 Optical Society of America
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