Abstract
Low threshold current and high efficiency devices are of great interest for several uses in optoelectronics. In this work, we demonstrate that low threshold current (3.5 mA cw, 3,0 rnA pulsed), high external efficiency (81% cw, 88% pulsed), high yield (--90% J* <8 mA) IiiGaAs/ GaAs QW lasers operating at 1 pm are obtained utilizing the temperature engineered growth technique (TEG).' Thie TEG laser concept relics on the temperature dependence of the growth rate of AlGaAs/GaAs on different facets of a nonplanar substrate to form a buried heterostructure.
© 1992 Optical Society of America
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