Abstract

Arrays of Ga As-based field-effect transistors (FET) monolithically integrated with GaAs-based multiple quantum well self-electrooptic effect devices (SEEDs) have recently been demonstrated as fast and energy-efficient opto-electronic smart-pixels.^1-3 Planar process technology¹ allows for the batch fabrication of complicated circuits, containing large numbers of transistors and diodes. For example, in the recently² demonstrated 4×4 array of EET-SEED switches operating at 400Mb/s, each node contains 25 EETs and 17 quantum well diodes. The highest integration density obtained in a single circuit is a ring counter containing 44 transistors.³ Electrically driven circuits³ provided modulation of optical outputs up to 2Gb/s, while optically driven single- and double-stage amplifiers operated at 100 MHz required optical switching energies in the 100 fJ range / When optically driven, the performance of these circuits is tested with optical inputs from current modulated semiconductor lasers, and optical outputs detected with fast detectors. In order to test the capability of these circuits to operate under ultrafast pulsed conditions, we have undertaken a series of experiments in which picosecond and subpicosecond pulses were used as optical inputs, and the pump-and-probe technique^4,5 was used to detect the optical outputs.

© 1993 Optical Society of America