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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1993),
  • paper CME1

High temperature operation 1.3 μm GaInAsP/InP GRIN-SCH strained-layer quantum well lasers

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Abstract

Extremely low threshold current (Ith) strained-layer quantum well (SL-QW) laser diodes (LDs) were examined using the combination. of short cavity and high reflective (HR) coating.1,3 However, the maximum CW operating temperature was limited to around 100°C,2,3 since the SL-QW LDs, especially in the compressive strain case, which are few in number and which have only a thin layer of quantum wells, have high threshold, carrier density. As a result, they suffer from the Auger recombination. Therefore, a large amount of quantum wells and cavity loss reduction is thought likely to improve the temperature characteristics. In this paper, we have investigated the temperature dependence of the Ith in 1.3 μm compressively SL-QW LDs with HR coatings as a function of the well number (Nw).

© 1993 Optical Society of America

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