Abstract

High-power, diffraction-limited, wavelength-tunable sources of near infra-red radiation are required for a myriad of scientific applications such as spectroscopy, device and materials characterization, laser and amplifier pumping, and frequency doubling. Single-mode, tunable semiconductor lasers are available commercially which emit up to tens of mW, however for applications which require hundreds of mW of output power both, organic dye and Ti:Sapphire lasers are typically used. In this paper, a novel semiconductor external- cavity laser is described which emits up to 1.0 W CW in a diffraction-limited radiation pattern, and whose output is wavelength-tunable over 35 nm centered at 852 nm.

© 1993 Optical Society of America