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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1993),
  • paper CThC2

Femtosecond carrier dynamics and stimulated transitions induced carrier temperature change in InGaAs/AlGaAs strained-layer SQW diode lasers

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Nonlinear gain and transient carrier dynamics play important roles in laser line width, modulation, bandwidth, amplification, and short-pulse generation.1 Picosecond and femtosecond pump-probe measurements of nonlinear gain dynamics have been performed in AlGaAs- and InGaAsP-based devices,2–4 By using single-frequency pump-probe techniques, carrier heating was found to be dominated by free-carrier absorption with negligible contributions from stimulated transitions and two-photon absorption.

© 1993 Optical Society of America

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