Abstract

We report a new structure for the high power GaAIAs single mode LDs, combined structure with current blocked regions near mirror,¹ and T^3,2 The T³ LDs must be controlled to vary gradually the active layer thickness from 0.07 µm in the inner region to 0.03 µm at the facets. The divergence θ_⊥ is determined by the very thin active layer near the facets, while the threshold current I_th is mainly determined by the rather thicker active layer in the inner region, that is, I_th, and θ_⊥ can be controlled independently of each other, to get the lowest I_th and the narrow beam.

© 1993 Optical Society of America