Abstract

Recently suggested effect of the non-steady- state photo-EMF via the dynamic space charge gratings¹ proved to be an efficient technique for characterization of the photorefractive crystals and noncenter symmetrical photoconductive media. In addition, different adaptive photodetectors possessing the unique properties for high-sensitivity laser vibrometers, optical fiber sensors, and communication lines can be developed on this basis,^2,3 The present work reports investigations of this effect in semi-insulating GaAs and CdTe in the near-IR part of the spectrum (0.8 - 0.9 µm) which is dose to the fundamental optical absorption edge of these crystals.

© 1993 Optical Society of America