Abstract
Vertical cavity surface-emitting semiconductor lasers offer interesting possibilities for applications such as optical interconnections and massive optical signal processing because they have well-shaped output beams and can be manufactured in large arrays, if the cavity size is on the order of one wavelength cubed, then new effects become possible. This is due to the fact that the mode density per unit frequency interval becomes small and thus the ratio, B, of the spontaneous emission going into a single (lasing) mode divided by the total spontaneous emission is increased.1
© 1993 Optical Society of America
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