Abstract

Antiguided semiconductor laser arrays have achieved some impressive results in terms of diffraction-limited power.¹ Recent devices have yielded in excess of 0.5 W cw in a diffraction-limited beam. To date, however, there have been no theoretical or experimental studies of the temporal behavior of these arrays. In this paper, we present the results of a theoretical investigation of the dynamics of antiguided semiconductor laser arrays. The analysis is based on a propagation model we have previously used to describe the dynamics of gain-guided laser arrays.² The model includes the effects of diffraction, spatial hole burning, and carrier-induced antiguiding. Our results show that the temporal stability of these antiguided arrays is highly dependent on the pump current level. Gain saturation and carrier-induced antiguiding can lead to sustained temporal oscillations in the output power as well as asymmetries in the beam profile.

© 1993 Optical Society of America