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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1993),
  • paper CTuM3

Low threshold buried heterostructure vertical-cavity surface-emitting laser

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Abstract

Vertical cavity surface-emitting lasers (VCSEL) are very promising for applications in optical communications and optical interconnects.1-5 Although low threshold currents have been demonstrated, it is very difficult to obtain transverse mode control at the same time. The laser-post-type index-guided VCSELs, though exhibiting very low threshold currents, emit in multiple transverse modes even at low currents. Gain-guided VCSELs, on the other hand, exhibit well-behaved transverse mode behavior with much higher threshold currents.4 In order to achieve simultaneous current and optical confinements, it is desirable to fabricate a buried heterostructure (BH) VCSEL to provide a small built-in index difference in the transverse direction. However, due to the high Al content in the epitaxially-grown Bragg reflectors, regrowth of AlGaAs has been extremely difficult to achieve, in this paper, we report on the first buried heterostructure VCSELs regrown by organometallic chemical vapor deposition (OMCVD). A factor of 13.5 reduction on threshold current density is obtained with the BH VCSELs in comparison w:ith the gain- guided VCSELs fabricated on the same wafer.

© 1993 Optical Society of America

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