Abstract

Monolithic, two-dimensional visible surface- emitting laser diodes are desirable for optical information processing systems and high definition displays. High power GaInP/GaAlInP laser diodes with emission wavelengths of 635 nm are particularly attractive, since they can be used to replace traditional low-power He-Ne gas lasers in applications such as optical recording, bar code scanners, and laser printers and pave the way for future medical applications, ^1-3 In this work, we demonstrate the first GaInP/GaAlInP in-plane surface-emitting laser diodes with ion beam etched ridges and micromirrors.

© 1993 Optical Society of America