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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1993),
  • paper CTuN8

Interferometric measurement of lateral phase profile and thermal lensing in high power broad-area diode amplifiers

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Abstract

Broad-area semiconductor amplifiers have been shown to generate high-power diffraction-limited radiation, with 21 W achieved under pulsed operation1 and 3.3 W under continuous wave (cw) operation.2 Degradation of the output power and beam quality are caused by phase distortions introduced by the amplifier, such as the thermally-induced. refractive index variation ("thermal lens") caused by lateral heat flow in the heatsink. Previous lens displacement measurements of thermal lensing3 did not directly measure the actual lateral phase profile, while photo luminescence microprobe techniques used to measure the lateral temperature distribution4,5 measured only the facet surface temperature and not the integrated phase delay of the propagating beam.

© 1993 Optical Society of America

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