Abstract

ZnSe is an important II-VI semiconductor with a bandgap of 2.67 eV, making it potentially useful for blue opto-electronic applications. The electrical performance of this material may be limited by defects, such as dislocations and vacancies, as well as carbon incorporation, introduced during the growth process. Using an excimer laser-assisted MOCVD technique, we are able to grow epitaxial ZnSe films at lower temperatures than with conventional MOCVD, resulting in higher quality films. In this technique, 193 nm radiation from an ArF excimer laser is used to photodissociate the metal organic precursors (dimethyl zinc [DMZ] and diethyl selenium [DES] ) in a region adjacent to the film growth.

© 1993 Optical Society of America