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Conferences > CLEO > 1993 > CWG > CWG5
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1993),
  • paper CWG5

Monolithic integration of a strained layer InGaAs-GaAs-AlGaAs quantum well laser with a passive waveguide by selective-area MOCVD

T. M. Cockerill, D. V. Forbes, H. Han, and J. J. Coleman

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Abstract

In this talk, we demonstrate the monolithic integration of a strained layer InGaAs-GaAs-AlGaAs quantum well laser with a passive waveguide by conventional atmospheric pressure MOCVD selective-area growth and regrowth. Growth inhibition from a silicon dioxide mask is the mechanism used for selective-area growth rate enhancement.

© 1993 Optical Society of America

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