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Conferences > CLEO > 1993 > CWJ > CWJ53
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1993),
  • paper CWJ53

Strain effects on gain in ternary and quaternary InGaAsP quantum well lasers

R. O. Miles, M. A. Dupertuis, F. K. Reinart, J. E. A. Whiteaway, A. Briggs, and A. D. Smith

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Abstract

In this paper we report gam measurements in strained and non-strained ternary and strained quaternary InGaAsP quantum, well material. The material investigated was grown by GSMBE and MOCVD and processed into broad area lasers. Gain measurements derived from the spontaneous emission transverse to the laser cavity were made based on a technique developed by Henry.1 A more complete description of this technique applied to InGaAs quantum well material is presented elsewhere.2

© 1993 Optical Society of America

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