Abstract
Several techniques have recently been examined for fabricating unstable resonator diode lasers, namely reactive-ion-etching (RIE) and ion-beam-milling to create curved cavity mirrors, epitaxial regrowth to effect divergent lenses within the gain stripe, and cavity micro-heating to thermally induce index change. Of these, the last three approaches have demonstrated nearly diffraction-limited output at high powers, but to our knowledge, such ideal characteristics have not been realized with the highly manufacturable RIE process. We have fabricated wide-stripe unstable resonators using RIE and have measured M2 beam quality values nearly equivalent to those obtainable from narrow-stripe diode lasers.
© 1994 Optical Society of America
PDF ArticleMore Like This
R. K. Defreez, Z. Bao, P. D. Carleson, C. Largcnt, C. Moeller, G. C. Dente, D. J. Gallant, J. Metz, M. L. Tilton, G. A. Evans, W. F. Reichert, C. A. Wang, and H. K. Choi
CWN3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1992
Craig Largent, Michael Allen, Christian Schaus, Jane Yang, Michael Jansen, and David Gallant
CTuQ3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1991
P. Tihanyi, D. K. Wagner, H. J. Vollmer, A. J. Roza, C. M. Harding, R. J. Davis, and E. D. Wolf
WA5 Semiconductor Lasers (ASLA) 1987