Abstract
High-speed metal-semiconductor-metal photodetectors (MSMPDs) have drawn great interest recently, due to their potential applications in future high-speed optical fiber communication, chip-to-chip optical interconnection, and sampling. Previously, MSMPDs in low-temperature-grown GaAs with a response time of 0.87 ps and a 3-dB bandwidth of 510 GHz have been reported,1 as well as MSMPDs in bulk Si with 3.7 ps and 110 GHz.2 However, the response of Si MSMPDs is wavelength dependent and the fast response was achieved only at short wavelengths (~400 nm). At long wavelengths, such as that of GaAs lasers (~800 nm), their bandwidth dropped to ~40 GHz. This is because that it will take a long time to collect the photo-generated carriers that are deep inside the semiconductor. This wavelength dependence in response and the slow speed at long wavelengths impose serious limitations to Si detectors' application.
© 1994 Optical Society of America
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