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Highly reliable lasers that utilize InGaAsP and InGaAs lattice matched to InP have been around for a number of years now. Although similar device structures can be grown using InGaAsP-InGaP lattice matched to GaAs, growth of InGaAsP and InGaP lattice matched to GaAs has not received as much attention because the AlGaAs-GaAs system is always lattice matched and therefore easier to grow. The benefits of using strained layers can be capitalized on by using the InGaAsP-InGaP system instead of the inherently lattice matched AlGaAs-GaAs system.
© 1994 Optical Society of America
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