Abstract
The understanding of temperature-dependent behavior of semiconductor quantum well (QW) lasers is of great importance for applications requiring high temperature operation of diode lasers.1-3 In this paper, we present results of a thorough experimental and theoretical investigation of temperature behavior of single QW (SQW) and triple QW (3QW) 980-nm Al-free lasers. Although the laser design used in this study is specific, the results and understanding will be useful to design quantum well lasers in general.
© 1994 Optical Society of America
PDF ArticleMore Like This
D. B. Darby, Z. Wang, D. C. Flanders, and J. J. Hsieh
WB5 Optical Fiber Communication Conference (OFC) 1993
E. C. Vail, R. E Nabiev, and C. J. Chang-Hasnain
CFE4 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1994
E. C. Vail, R. F. Nabiev, and C.J. Chang-Hasnain
FA2 Integrated Photonics Research (IPR) 1994