Nearly Planar Low Threshold Vertical-Cavity Surface-Emitting Lasers Using High Contrast Mirrors and Native Oxidation

D.G. Deppe; D.L. Huffaker; C.C. Lin; T.J. Rogers

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1994),
paper CPD2

Nearly Planar Low Threshold Vertical-Cavity Surface-Emitting Lasers Using High Contrast Mirrors and Native Oxidation

D.G. Deppe, D.L. Huffaker, C.C. Lin, and T.J. Rogers

Conference on Lasers and Electro-Optics 1994

Anaheim, California United States
8–13 May 1994
ISBN: 1-55752-341-X

From the session
Postdeadline (CPD)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
D. G. Deppe, D. L. Huffaker, C. C. Lin, and T. J. Rogers, "Nearly Planar Low Threshold Vertical-Cavity Surface-Emitting Lasers Using High Contrast Mirrors and Native Oxidation," in Conference on Lasers and Electro-Optics, T. Baer, A. Smirl, J. Bowers, and D. Miller, eds., Vol. 8 of OSA Technical Digest (Optica Publishing Group, 1994), paper CPD2.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Save article

Abstract

Data will be presented characterizing a device structure for the vertical-cavity surface-emitting laser (VCSEL) which has achieved low threshold operation. An advantage of the laser structure is nearly planar processing. In initial results we have achieved a room-temperature continuous-wave threshold current of 225μA in an 8μm square device. To our knowledge, this is the lowest threshold current yet achieved in a vertical-cavity laser. Since the threshold current density is only 350A/cm², this also represents to our knowledge the lowest threshold current density in a VCSEL of any diameter. The threshold voltage drive is 1.9V, with a drive voltage of 2.9V at four times threshold.

PDF Article

More Like This

Low Threshold Planarized Vertical-Cavity Surface-Emitting Lasers

R.S. Geels, S.W. Corzine, J.W. Scott, D.B. Young, and L.A. Coldren
PD31 Optical Fiber Communication Conference (OFC) 1990

A Record Low Threshold InGaAs/GaAlAs Vertical-Cavity Surface-Emitting Laser

Y. Hayashi, T. Mukaihara, N. Hatori, N. Ohnoki, A. Matsutani, F. Koyama, and K. Iga
PD2 Quantum Optoelectronics (QOE) 1995

Low voltage vertical-cavity surface-emitting lasers with low resistance GaAs/AlAs mirrors using δ-doped transition layers

A. Paraskevopoulos, H. Künzel, J. Sebastian, S. Gramlich, R. Hey, B. Jenichen, and J. Böttcher
CWD2 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1994

Previous Article Next Article