Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1994),
  • paper CPD5

Very High Characteristic Temperature and Constant Differential Quantum Efficiency GaInAsP/InP 1.3μm Strained-layer Quantum Well Lasers by the Use of Temperature Dependent Reflectivity (TDR) Mirror

Not Accessible

Your library or personal account may give you access


Semiconductor lasers with less temperature dependent threshold current Ith and differential quantum efficiency ηd are very attractive for many applications.

© 1994 Optical Society of America

PDF Article
More Like This
High temperature operation 1.3 μm GaInAsP/InP GRIN-SCH strained-layer quantum well lasers

T. Namegaya, A. Kasukawa, N. Iwai, and T. Kikuta
CME1 Conference on Lasers and Electro-Optics (CLEO) 1993

Low power consumption 1.3 μm GaInAsP/ InP CRIN-SCH strained-layer MQW lasers

A. Kasukawa, T. Namegaya, N. Iwai, and N. Yamanaka
CWO2 Conference on Lasers and Electro-Optics (CLEO) 1994

The Temperature Dependence of Light-Current Characteristics of 0.98 µm Strained-Quantum-Well Lasers

E. C. Vail, R. F. Nabiev, and C.J. Chang-Hasnain
FA2 Integrated Photonics Research (IPR) 1994


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access Optica Member Subscription

Select as filters

Select Topics Cancel
© Copyright 2022 | Optica Publishing Group. All Rights Reserved