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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1994),
  • paper CThB1

Device and process technologies lor monolithic, high-speed, low-chirp semiconductor laser transmitters

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Abstract

GaAs-based MQW lasers exhibiting very efficient high-speed and low-chirp direct modulation are of great interest for mono- lithically-integrated optoelectronic transmitter circuits, due to the maturity of GaAs transistor and circuit fabrication technologies. By simultaneously adding p-doping and strained In035Ga0>6SAs/GaAs MQWs in the laser active region, we have previously demonstrated both very efficient high-speed modulation (20 GHz at a dc bias current of 50 mA) and the first semiconductor lasers to achieve a direct modulation bandwidth of 30 GHz (dc bias, heat-sink temperature = 25°C).1 In addition, the above devices show a factor of 2 reduction in the line- width enhancement factor, a, compared with that of unstrained, undoped GaAs/ AlGaAs MQW lasers.2 This reduction is expected to lead to a substantial reduction in chirp under high-speed modulation.

© 1994 Optical Society of America

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