Abstract
Although the use of strained layers to improve the performance of visible emitting (AIy,Ga1_y)xln1_xP lasers is well established,1,2 it is difficult to assess the mechanisms involved purely from threshold current measurements. We present studies of the spontaneous emission from both strained and unstrained devices which allow us to observe the strain induced changes in the valence bands and to measure the threshold gain of the lasers.
© 1994 Optical Society of America
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