Abstract
GaAs on Si has long been seen as a way to integrate GaAs optical devices with established Si electronics. Unfortunately, the 4% lattice mismatch and the thermal expansion mismatch lead to high defect densities as well as residual thermal stress when GaAs films are grown heteroepitaxially. To avoid these problems, we developed a novel self-assembly integration technique whereby lifted-off GaAs blocks suspended in liquid are allowed to fall into etched pits on a Si wafer.
© 1994 Optical Society of America
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