Ultralow threshold currents (&lt;0.1 mA) in InGaAs quantum well lasers by low-temperature operation

B. Zhao; T. R. Chen; Y. H. Zhuang; L. E. Eng; A. Shakouri; A. Yariv; T. J. Watson

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1994),
paper CThR1

Ultralow threshold currents (<0.1 mA) in InGaAs quantum well lasers by low-temperature operation

B. Zhao, T. R. Chen, Y. H. Zhuang, L. E. Eng, A. Shakouri, A. Yariv, and T. J. Watson

Conference on Lasers and Electro-Optics 1994

Anaheim, California United States
8–13 May 1994
ISBN: 1-55752-341-X

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Strained Layer and Quantum Wire Lasers (CThR)

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B. Zhao, T. R. Chen, Y. H. Zhuang, L. E. Eng, A. Shakouri, A. Yariv, and T. J. Watson, "Ultralow threshold currents (<0.1 mA) in InGaAs quantum well lasers by low-temperature operation," in Conference on Lasers and Electro-Optics, T. Baer, A. Smirl, J. Bowers, and D. Miller, eds., Vol. 8 of OSA Technical Digest (Optica Publishing Group, 1994), paper CThR1.

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Abstract

Fabrication of low threshold current semiconductor lasers are of great importance for optical interconnects and other applications. Specially, integration of ultralow semiconductor lasers and superconducting electronic devices and operating them at low temperature will be necessary in high performance systems. These are also attractive for applications in space where the low temperatures are easy to achieve.

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