Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO > 1994 > CThR > CThR6
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1994),
  • paper CThR6

Low threshold operation of GaInP/AlInP quantum wire lasers produced by (GaP)m/(InP)m short period binary super-lattice active layers

Junji Yoshida and Katsumi Kishino

Not Accessible

Your library or personal account may give you access

Abstract

Quantum wire lasers (QWR-LD) have been found to have superior characteristics such as ultra low threshold current density (Jth)1 and less temperature dependency,2 etc., to quantum film lasers (QWF-LD). Recently, GaInP/AIInP compressive strained quantum wire lasers (CS-QWR-LD) were formed through natural rearrangement of composition by growing (GaP/InP) short period binary superlattice (SPBS).3 However a value of Jth was very high to be 2.5 kA/cm2 at room temperature,4 and it was higher even compared with GalnP/AIInP QWF-LDs.5

© 1994 Optical Society of America

PDF Article
More Like This
Characterization of Lasing Properties and Optical Anisotropy in GaInP/AlInP Compressive Stain Multi-quantum-wire Lasers

Junji Yoshida, Akihiko Kikuchi, Ichirou Nomura, and Katsumi Kishino
18P.24 Optoelectronics and Communications Conference (OECC) 1996

Strained AIGaInP/GaInP multiple-quantum-wire laser heterostructures

E. M. Stellini, F. J. Pearah, A. C. Chen, A. M. Moy, K. Y. Cheng, and K. C. Hsieh
CWG2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1993

Substrate misorientation effects in 660-nm bulk GaInP active layer lasers grown by gas-source molecular beam epitaxy.

Akihiko Kikuchi and Katsumi Kishino
CWG48 Conference on Lasers and Electro-Optics (CLEO:S&I) 1992

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use