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From the viewpoint of monolithic integration for future optical communication systems, much attention has been focused on InP-based external modulators and switching devices with QW structures1-3 due to the fascinatingly high performance of lasers and amplifiers made with these materials. In an attempt to overcome optical saturation at higher intensities due to hole pileup, the QWs are designed so that the valence-band offset is small, resulting in less electron confinement.
© 1994 Optical Society of America
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