Abstract
Molecular beam epitaxy (MBE) of GaAs and AlGaAs at low substrate temperatures produces films with up to 2% excess arsenic. Annealing to temperatures greater than 600°C forces most of this excess arsenic to precipitate into metallic clusters. Annealed low-temperature-growth GaAs (LTG:GaAs) or AlGaAs (LTG:AlGaAs) films are well suited for photoconductive switch applications because they exhibit relatively high mobilities, ultrashort lifetimes, and high resistivities.
© 1994 Optical Society of America
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