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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1994),
  • paper CWH19

Correlation between stress distributions on the facet and along the active region in 1.3-μm semiconductor diode lasers

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Abstract

Information on the stress (or strain) distribution in and around the active region in semiconductor diode lasers is important for an understanding of diode laser characteristics. Stress induced in the active region by fabrication and/or processing such as epitaxial growth, dielectric deposition, or metallization can determine the operating properties and reliability of the device.

© 1994 Optical Society of America

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