Abstract

Considerable progress has been made over the past few years in the growth of single crystal ZnSe by both molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). This has led to the development of photonic devices such as light-emitting diodes, laser diodes^1,2 and modulators³ operating in the blue-green spectral region. An important parameter which is sensitive to the material quality, and which for example determines the laser threshold condition, is the carrier lifetime. There have been various measurements of the carrier lifetime in ZnSe material, by both time-resolved photoluminescence (TRPL)^4,5 and pump-probe⁶ techniques. In this paper we present temperature dependent TRPL measurements, on both n- and p-type doped bulk material and undoped quantum well material.

© 1994 Optical Society of America