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Conferences > CLEO > 1994 > CWO > CWO3
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1994),
  • paper CWO3

Progress in long-wavelength strained-layer InGaAs(P) quantum well lasers and amplifiers

P. J. A. Thijs, L. F. Tiemeijer, J. J. M. Binsma, and T. van Dongen

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Abstract

InGaAs(P) quantum well (QW) semiconductor laser diodes (LDs)1 and semiconductor laser amplifiers2,3 (SLAs) have greatly progressed recently as a result of the application of deliberately grown-in biaxial strain. This paper reviews the origins of the improvements and the present state-of-the-art of 1.3 and 1.5 μm wavelength strained-layer InGaAs(P) Lds and SLAs.

© 1994 Optical Society of America

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