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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1994),
  • paper JWA5

Picosecond response of a Cr-doped GaAs/ AIGaAs semi-insulating multiple-quantum- well photorefractive device

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Abstract

Semi-insulating multiple-quantum-well (SI- MQW) photorefractive devices are attractive candidates for image processing applications because they are fast, sensitive, and compatible with semiconductor lasers. The diffraction efficiency of present devices falls off with decreasing grating period, limiting their spatial resolution to ~30 μm. In order to understand the charge transport processes that influence the resolution, we measure the picosecond response time of diffraction gratings in these devices as a function of fluence, and grating period.

© 1994 Optical Society of America

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