Abstract
Semiconductor multiple-quantum well (MQW) structures with InGaAs wells lattice-matched to InP barriers have attracted much attention because of applications in optoelectronics devices compatible with fiber-optics systems. The growth and the optical characterization of these heterostructures are still topics of extensive research aimed at understanding electronic properties and improveing material quality. Further, only a few measurements of the optical properties have been performed on a femtosecond time scale1, mainly because of a lack of widely tunable infrared laser sources.
© 1995 Optical Society of America
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