Ambipolar and electron transport in quantum-well laser structures with step-graded confinement layers

S. Marcinkevicius; U. Olin; U. Olin; J. Wallin; J. Wallin; K. Streubel; K. Streubel; G. Landgren; G. Landgren

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1995),
paper CThF3

Ambipolar and electron transport in quantum-well laser structures with step-graded confinement layers

S. Marcinkevicius, U. Olin, J. Wallin, K. Streubel, and G. Landgren

Conference on Lasers and Electro-Optics 1995

Baltimore, Maryland United States
21–26 May 1995
ISBN: 1-55752-400-9

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S. Marcinkevicius, U. Olin, J. Wallin, K. Streubel, and G. Landgren, "Ambipolar and electron transport in quantum-well laser structures with step-graded confinement layers," in Conference on Lasers and Electro-Optics, T. Deutsch, J. Goldsmith, D. Killinger, and G. Valley, eds., Vol. 15 of OSA Technical Digest (Optica Publishing Group, 1995), paper CThF3.

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Abstract

The advantage of grading of the confinement layers of quantum-well (QW) laser structures for high-speed performance is still a matter of controversy.¹ In this work we study the influence of step-grading the confinement layers on the photoexcited carrier transport in 1.55-μm InGaAsP/lnP graded-index separate-confinement-heterostructure (GRINSCH) QW laser structures. The measurements are performed by using the time-resolved-photoluminescence (PL) technique with upconversion. Ambipolar transport, governed by the holes, and electron transport are studied separately by choosing a high or a low photoexcited carrier density with respect to the p-doping of the structures.

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