Abstract
For submicrometer metal-semiconductor-metal (MSM) photodiodes and for photoconductors with subpicosecond lifetimes (e.g., low-temperature-grown GaAs), nonstationary transport effects, such as velocity overshoot, are important. Previous simulations of MSM photodetectors either assumed steady-state transport1 or used full dynamical simulations based on the Monte Carlo technique.2 Microscopic modeling of carrier trapping in photoconductors requires simulation of individual carriers, which is computer intensive when combined with a Monte Carlo model. However, thermal motion of carriers must be included since the trapping rate in low-temperature GaAs is determined by the thermal rather than the drift velocity.
© 1995 Optical Society of America
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