Abstract

All-optical spatial light modulators based on GaAs/AlGaAs semi-insulating multiple-quantum-well (S1MQW) photorefractive devices have demonstrated highly sensitive low-voltage operation at convenient diode-laser wavelengths in the near-infrared region.^1,2 While their diffraction performance has been generally characterized, the details of carrier transport and field screening during device operation are still not well understood. In this paper we examine the transient response of a SIMQW device by using a novel current-measurement technique and through numerical device modeling that allows an investigation of the significance of various effects, such as carrier accumulation and well capture/emission, on device sensitivity and resolution.

© 1995 Optical Society of America