Abstract

Many infrared detector types are used to fabricate focal plane arrays (FPA) meeting diverse requirements at operating temperatures from 4 K to room temperature. The most popular intrinsic photovoltaics for MWIR applications are HgCdTe and InSb; they can usually operate at higher temperatures than competing extrinsic devices, have higher quantum efficiencies and dissipate less power. Often consisting of an absorbing epitaxial layer on bulk or transparent substrate, the FPAs are backside-illuminated to provide near-100% optical fill factor and mechanical support.

© 1995 Optical Society of America